N-channel 80 V, 15 mΩ logic level MOSFET in an LFPAK56 (SOT669) package, rated for junction temperatures up to 175 °C and compliant with AEC-Q101 for automotive applications. The device supports repetitive avalanche operation, has a true logic level gate with a threshold voltage of at least 0.5 V at 175 °C, and offers a drain-source on-state resistance of 12.2 mΩ at 25 °C and 15 A. Maximum continuous drain current is 62 A at 25 °C, with a total power dissipation of 147 W. Thermal resistance from junction to mounting base is 1.02 K/W. The package measures up to 6.2 mm in length, 5.0 mm in width, and 1.2 mm in height.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
Power Field-Effect Transistor, 62A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
BUK9Y14-80E - N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y14-80E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y14-80E,115 can be used for catalog matching and distributor lookup.
N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8
Win Source Part Number: 958412-BUK9Y14-80E,1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 147W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): BUK9E15-60E,127; PMF3800SN,115; BUK7Y54-75B,115; PMPB40SNA,115"BUK9Y1
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-1810-2,1727-181
Base Product Number: BUK9Y14
Drive Voltage (Max Rds On, Min Rds On): 5V
MOSFET Transistor, N Channel, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET N-CH 80V 62A LFPAK56
MOSFET N-CH 80V 62A LFPAK56
| Nexperia B.V. | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9Y14-80E,115 | BUK9Y14-80E,115 | 278-BUK9Y14-80E,115 | 1727-1810-1-ND | 958412-BUK9Y14-80E,115 | 90W4306 | BUK9Y14-80E,115 | BUK9Y14-80E,115 |
| Product Name | N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 | N-Channel 80 V SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet Transistor, N Channel, 62 A, 80 V, 0.0113 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 62000 milliamps | 62000 milliamps | ||||||
| VGS(off) | 10 volts | |||||||
| PD | 147 milliwatts | 147000 milliwatts | 147000 milliwatts |
