N-channel 100 V MOSFET in an LFPAK56 (Power-SO8, SOT669) package, designed for automotive applications and qualified to AEC-Q101. It features a typical drain-source on-state resistance of 122 mΩ at 25 °C, a continuous drain current of 9.4 A at 25 °C, and a maximum junction temperature of 175 °C. The gate-source threshold voltage is specified from 0.5 V to 2.45 V across temperature, supporting true logic level operation. The device is repetitive avalanche rated with a non-repetitive avalanche energy of 9.5 mJ and has a thermal resistance of 4.03 K/W from junction to mounting base.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
BUK9Y153-100E - N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y153-100E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y153-100E,11
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 865034-BUK9Y153-100E
Series: Automotive, AEC-Q101, TrenchMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
Package: SC-100, SOT-669
Package: Reel - TR
Mounting: Surface Mount
Family Name: BUK9Y153
Categories: Discrete Semiconductor Products
Case / Package: LFPAK56, Power-SO8
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-1493-6, 568-10973-6, 1727-1493-1, BUK9Y153-100E,115-ND
N-Channel 100V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 9.4A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
MOSFET N-CH 100V 9.4A LFPAK56
MOSFET Transistor, N Channel, 9.4 A, 100 V, 0.117 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET N-CH 100V 9.4A LFPAK56
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9Y153-100E,115 | 278-BUK9Y153-100E,115 | 865034-BUK9Y153-100E,115 | 1727-1493-6-ND | BUK9Y153-100E,115 | BUK9Y153-100E,115 | 90W4309 | BUK9Y153-100E,115 |
| Product Name | N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 | N-Channel 100 V SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9Y153-100E,115 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 9.4 A, 100 V, 0.117 Ohm, 10 V, 1.7 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 9400 milliamps | 9400 milliamps | ||||||
| VGS(off) | 10 volts | |||||||
| PD | 37 milliwatts | 37000 milliwatts |
