Nexperia B.V. 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160QAZ

NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5160QA.

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified

Applications

• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 1W Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 1W Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 1W Surface Mount DFN1010D-3

Win Source Part Number: 1164928-PBSS4160QAZ
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Frequency - Transition: 180MHz
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 934067166147;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 568-10933-2-ND,568-10933-1-ND,568-10933-6-ND,568-10933-2,1727-1462-2,568-10933-1,1727-1462-1,PBSS4160QAZINACTIVE,568-10933-6,PBSS4160QAZ-ND,934067166147,1727-1462-6,PBSS4160QA
Base Product Number: PBSS4160