NPN low VCEsat transistor in a SOT89 package measuring 4.5 mm x 2.5 mm x 1.5 mm, designed for high-efficiency power switching applications such as DC-to-DC conversion, motor control, and MOSFET gate driving. It has a collector-emitter voltage rating of 30 V, continuous collector current of 5.1 A, and peak pulse current of 10.2 A. Collector-emitter saturation voltage is specified as low as 150 mV at 5.1 A collector current and 255 mA base current. Thermal resistance from junction to ambient is 60 K/W on a ceramic PCB. The device meets IEC 60134 for limiting values.
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PX.
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89
PBSS303NX - 30 V, 5.1 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS303NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 5.1 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 5.1 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS303NX,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086414-PBSS303NX,11
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 5.1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 220mV @ 255mA, 5.1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 250 @ 2A, 2V
Maximum Power Dissipation: 2.1W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
TRANS NPN 30V 5.1A SOT89
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PBSS303NX,115 | 1727-PBSS303NX,115CT-ND | 276-PBSS303NX,115 | 1086414-PBSS303NX,115 | PBSS303NX,115 | 29AK2882 |
| Product Name | 30 V, 5.1 A NPN low VCEsat transistor | Single Bipolar Transistors | 30 V 5.1 A SOT-89 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar Rohs Compliant Nexperia |
| Package Type | SOT89; SOT89 SOT89 | SOT89; TO-243AA | SOT3; SOT89; SOT-89-3 | SOT89; SOT-89 | TO-3 | |
| Polarity | NPN | NPN; NPN | ||||
| Transistor Grade / Operating Range | Automotive |
