Nexperia B.V. 30 V, 5.1 A NPN low VCEsat transistor PBSS303NX,115

Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
  • 30 V, 5.1 A NPN low VCEsat transistor - PBSS303NX,115 - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-PBSS303NX,115CT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PBSS303NX,115DKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PBSS303NX,115TR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115 - 1086414-PBSS303NX,115 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS303NX,115 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor, Bipolar Rohs Compliant Nexperia - 29AK2882 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 5.1 A NPN low VCEsat transistor - PBSS303NX,115 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 5.1 A NPN low VCEsat transistor
PBSS303NX,115
30 V, 5.1 A NPN low VCEsat transistor PBSS303NX,115
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS303PX.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
30 V 5.1 A SOT-89 Bipolar Transistor
276-PBSS303NX,115
30 V 5.1 A SOT-89 Bipolar Transistor 276-PBSS303NX,115
PBSS303NX - 30 V, 5.1 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS303NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 5.1 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 5.1 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS303NX,115 can be used for catalog matching and distributor lookup.

PBSS303NX - 30 V, 5.1 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin Product overview: PBSS303NX,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30 V, 5.1 A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, 30 V, 5.1 A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PBSS303NX,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS303NX,115CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX,115CT-ND
Single Bipolar Transistors 1727-PBSS303NX,115CT-ND
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS303NX,115DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX,115DKR-ND
Single Bipolar Transistors 1727-PBSS303NX,115DKR-ND
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS303NX,115TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX,115TR-ND
Single Bipolar Transistors 1727-PBSS303NX,115TR-ND
Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115 - 1086414-PBSS303NX,115 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115
1086414-PBSS303NX,115
TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115 1086414-PBSS303NX,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086414-PBSS303NX,11 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 5.1A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 220mV @ 255mA, 5.1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 250 @ 2A, 2V Maximum Power Dissipation: 2.1W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086414-PBSS303NX,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 5.1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 220mV @ 255mA, 5.1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 250 @ 2A, 2V
Maximum Power Dissipation: 2.1W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS303NX,115 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS303NX,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS303NX,115
TRANS NPN 30V 5.1A SOT89

TRANS NPN 30V 5.1A SOT89

Supplier's Site
Transistor, Bipolar Rohs Compliant Nexperia - 29AK2882 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
29AK2882
Transistor, Bipolar Rohs Compliant Nexperia 29AK2882
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS303NX,115 276-PBSS303NX,115 1727-PBSS303NX,115CT-ND 1086414-PBSS303NX,115 PBSS303NX,115 29AK2882
Product Name 30 V, 5.1 A NPN low VCEsat transistor 30 V 5.1 A SOT-89 Bipolar Transistor Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PBSS303NX,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT89; SOT89 SOT89 SOT89; TO-243AA SOT3; SOT89; SOT-89-3 SOT89; SOT-89 TO-3
Polarity NPN NPN; NPN
Transistor Grade / Operating Range Automotive
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