Nexperia B.V. Bipolar Transistor Arrays PBSS4032SN,115

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO
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Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO
Request a Quote Datasheet

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Description
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Bipolar Transistor Arrays - 1727-5102-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-5102-2-ND
Bipolar Transistor Arrays 1727-5102-2-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 - 791386-PBSS4032SN,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115
791386-PBSS4032SN,115
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 791386-PBSS4032SN,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791386-PBSS4032SN,11 5 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 2.3W Transistor Type: 2 NPN (Dual) Frequency - Transition: 140MHz Family Name: PBSS4032SN Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Current - Collector (Ic) (Maximum): 5.7A Voltage - Collector Emitter Breakdown (Maximum): 30V Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN; Introduction Date: May 31, 2010 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791386-PBSS4032SN,115
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Power - Max: 2.3W
Transistor Type: 2 NPN (Dual)
Frequency - Transition: 140MHz
Family Name: PBSS4032SN
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Current - Collector (Ic) (Maximum): 5.7A
Voltage - Collector Emitter Breakdown (Maximum): 30V
Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V
Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN;
Introduction Date: May 31, 2010
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4032SN,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4032SN,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4032SN,115
TRANS 2NPN 30V 5.7A 8SO

TRANS 2NPN 30V 5.7A 8SO

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1727-5102-2-ND 791386-PBSS4032SN,115 PBSS4032SN,115
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 8-SO
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR)
IC(max) 1.00E-4 milliamps 5700 milliamps
Power Gain 250 dB
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