Nexperia B.V. TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 PBSS4032SN,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791386-PBSS4032SN,11 5 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 2.3W Transistor Type: 2 NPN (Dual) Frequency - Transition: 140MHz Family Name: PBSS4032SN Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Current - Collector (Ic) (Maximum): 5.7A Voltage - Collector Emitter Breakdown (Maximum): 30V Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN; Introduction Date: May 31, 2010 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791386-PBSS4032SN,11 5 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 2.3W Transistor Type: 2 NPN (Dual) Frequency - Transition: 140MHz Family Name: PBSS4032SN Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Current - Collector (Ic) (Maximum): 5.7A Voltage - Collector Emitter Breakdown (Maximum): 30V Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN; Introduction Date: May 31, 2010 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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Suppliers

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Product
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Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 - 791386-PBSS4032SN,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115
791386-PBSS4032SN,115
TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 791386-PBSS4032SN,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 791386-PBSS4032SN,11 5 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Power - Max: 2.3W Transistor Type: 2 NPN (Dual) Frequency - Transition: 140MHz Family Name: PBSS4032SN Categories: Discrete Semiconductor Products Manufacturer Package: 8-SO Current - Collector (Ic) (Maximum): 5.7A Voltage - Collector Emitter Breakdown (Maximum): 30V Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Maximum): 100nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN; Introduction Date: May 31, 2010 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 791386-PBSS4032SN,115
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Power - Max: 2.3W
Transistor Type: 2 NPN (Dual)
Frequency - Transition: 140MHz
Family Name: PBSS4032SN
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Current - Collector (Ic) (Maximum): 5.7A
Voltage - Collector Emitter Breakdown (Maximum): 30V
Vce Saturation (Maximum) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Maximum): 100nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 250 @ 2A, 2V
Alternative Parts (Cross-Reference): PBSS4032SN,118 ; PBSS4032SN;
Introduction Date: May 31, 2010
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-5102-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-5102-2-ND
Bipolar Transistor Arrays 1727-5102-2-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 5.7A 140MHz 2.3W Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4032SN,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4032SN,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4032SN,115
TRANS 2NPN 30V 5.7A 8SO

TRANS 2NPN 30V 5.7A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 791386-PBSS4032SN,115 1727-5102-2-ND PBSS4032SN,115
Product Name TRANSISTORS - Transistors (BJT) - Arrays - PBSS4032SN,115 Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 "8-SOIC (0.154"", 3.90mm Width)" 8-SO
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR)
IC(max) 1.00E-4 milliamps 5700 milliamps
Power Gain 250 dB
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