Nexperia B.V. 30 V, 4.2 A PNP low VCEsat transistor PBSS4032PX,115

Description
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX Features and benefits Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Description
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX Features and benefits Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a SOT89 surface-mounted plastic package measuring 4.5 mm x 2.5 mm x 1.5 mm, with a 1.5 mm lead pitch. It has a collector-emitter voltage rating of -30 V, a continuous collector current of -4.2 A, and a peak collector current of -10 A. The device exhibits a collector-emitter saturation voltage as low as 230 mV at -4 A collector current and -400 mA base current, and a saturation resistance of 58 mΩ under the same conditions. Maximum power dissipation is 600 mW on a standard FR4 PCB, rising to 2.5 W on a ceramic substrate. Junction temperature ranges from -55 °C to 150 °C. It meets the IEC 60134 absolute maximum rating standard. The NPN complement is PBSS4032NX.

Datasheet Summary
Powered by GS/AI

PNP low VCEsat transistor in a SOT89 surface-mounted plastic package measuring 4.5 mm x 2.5 mm x 1.5 mm, with a 1.5 mm lead pitch. It has a collector-emitter voltage rating of -30 V, a continuous collector current of -4.2 A, and a peak collector current of -10 A. The device exhibits a collector-emitter saturation voltage as low as 230 mV at -4 A collector current and -400 mA base current, and a saturation resistance of 58 mΩ under the same conditions. Maximum power dissipation is 600 mW on a standard FR4 PCB, rising to 2.5 W on a ceramic substrate. Junction temperature ranges from -55 °C to 150 °C. It meets the IEC 60134 absolute maximum rating standard. The NPN complement is PBSS4032NX.

Suppliers

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Product
Description
Supplier Links
30 V, 4.2 A PNP low VCEsat transistor - PBSS4032PX,115 - Nexperia B.V.
Nijmegen, Netherlands
30 V, 4.2 A PNP low VCEsat transistor
PBSS4032PX,115
30 V, 4.2 A PNP low VCEsat transistor PBSS4032PX,115
PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX Features and benefits Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032NX

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • Optimized switching time
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High energy efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4032PX,115 - 1086450-PBSS4032PX,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4032PX,115
1086450-PBSS4032PX,115
TRANSISTORS - Transistors (BJT) - Single - PBSS4032PX,115 1086450-PBSS4032PX,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086450-PBSS4032PX,1 15 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 115MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 4.2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 400mV @ 200mA, 4A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 150 @ 2A, 2V Maximum Power Dissipation: 2.5W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086450-PBSS4032PX,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 115MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 4.2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 400mV @ 200mA, 4A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 150 @ 2A, 2V
Maximum Power Dissipation: 2.5W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

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Transistor,pnp,30V,4.2A,sot89; Transistor Polarity Nexperia - 84R0216 - Newark, An Avnet Company
Chicago, IL, United States
Transistor,pnp,30V,4.2A,sot89; Transistor Polarity Nexperia
84R0216
Transistor,pnp,30V,4.2A,sot89; Transistor Polarity Nexperia 84R0216
TRANSISTOR,PNP,30V,4 .2A,SOT89; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:4.2A; Power Dissipation:600mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:115MHz RoHS Compliant: Yes

TRANSISTOR,PNP,30V,4.2A,SOT89; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:4.2A; Power Dissipation:600mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:115MHz RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4032PX,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4032PX,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4032PX,115
TRANS PNP 30V 4.2A SOT89

TRANS PNP 30V 4.2A SOT89

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number PBSS4032PX,115 1086450-PBSS4032PX,115 1727-5100-1-ND 84R0216 PBSS4032PX,115
Product Name 30 V, 4.2 A PNP low VCEsat transistor TRANSISTORS - Transistors (BJT) - Single - PBSS4032PX,115 Single Bipolar Transistors Transistor,pnp,30V,4.2A,sot89; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT89; SOT89 SOT89 SOT3; SOT89; SOT-89-3 SOT89; TO-243AA TO-3 SOT89; SOT-89
Polarity PNP; PNP PNP PNP
Transistor Grade / Operating Range Automotive
Transistor Type Transistor,pnp,30V,4.2A,sot89; Transistor Polarity Nexperia
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