Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a SOT666 surface-mounted plastic package measuring 1.6 mm x 1.2 mm x 0.55 mm. The N-channel device has a drain-source voltage rating of 60 V and continuous drain current of 330 mA, while the P-channel device has a drain-source voltage rating of 50 V and continuous drain current of 170 mA. Both feature logic-level compatibility, very fast switching, and Trench MOSFET technology. ESD protection rated up to 2 kV for the N-channel and 1 kV for the P-channel. Rated junction temperature range from -55 °C to 150 °C.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
60/50V 330/170mA N/P-Ch JFET SOT-6 Product overview: NX1029X,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 170mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 170mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NX1029X,115 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1084166-NX1029X,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 60V, 50V
Continuous Drain Current at 25°C: 330mA, 170mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.35nC @ 5V
Max Input Capacitance: 36pF @ 25V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Safety, Industrial, Power Management, Consumer Electronics, Portable Devices
Mosfet Array N and P-Channel 60V, 50V 330mA, 170mA 500mW Surface Mount SOT-666
Mosfet Array N and P-Channel 60V, 50V 330mA, 170mA 500mW Surface Mount SOT-666
Mosfet Array N and P-Channel 60V, 50V 330mA, 170mA 500mW Surface Mount SOT-666
MOSFET, N & P-CH, 60V, 0.33A, SOT-666; Transistor Polarity:Complementa
MOSFET N/P-CH 60V 0.33A SOT666
MOSFET N/P-CH 60V/50V SOT666
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX1029X,115 | 289-NX1029X,115 | 1084166-NX1029X,115 | 1727-1277-1-ND | 85Y0083 | NX1029X,115 | NX1029X,115 |
| Product Name | 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET | 50V 170mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NX1029X,115 | FET, MOSFET Arrays | Mosfet, N & P-Ch, 60V, 0.33A, Sot-666; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 to 50 volts | 60 to 50 volts | ||||
| IDSS | 330000 milliamps | 330 milliamps | 330 milliamps | ||||
| VGS(off) | 20 volts | ||||||
| PD | 330 milliwatts | 500 milliwatts |
