N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, a gate-source voltage range of −20 V to +20 V, and a continuous drain current of 270 mA at 25 °C with Vᵢᵣ = 10 V. The on-state resistance is 2.2 Ω to 2.8 Ω at Vᵢᵣ = 10 V and Iᵢ = 200 mA. Total power dissipation is 310 mW at 25 °C ambient temperature. ESD protection exceeds 2 kV HBM. The device is logic-level compatible and supports fast switching for applications such as relay driving, high-speed line driving, and low-side load switching.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
MOSFET N-Ch 60V 270mA Auto TO-236AB
MOSFET N-Ch 60V 270mA Auto TO-236AB
NX7002BK - 60 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: NX7002BKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NX7002BKR can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 60V, 0.27A, 0.31W, TO236AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
MOSFET N-CH 60V 270MA TO236AB
MOSFET N-CH 60V 270MA TO236AB
MOSFET 60V N-channel Trench MOSFET
| Nexperia B.V. | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NX7002BKR | 1727-2663-2-ND | 1512761 | 278-NX7002BKR | 99Y9557 | NX7002BKR | NX7002BKR | NX7002BKR |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFETs | N-Channel 60 V MOSFET Transistor | Mosfet, N-Ch, 60V, 0.27A, 0.31W, To236Ab; Channel Type Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 270000 milliamps | 270 milliamps | 270 milliamps | |||||
| VGS(off) | 20 volts | |||||||
| PD | 310 milliwatts | 310 milliwatts |
