Nexperia B.V. 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160TVL

Description
NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial. Power management: DC-to-DC conversion Supply line switching. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors).
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Description
NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial. Power management: DC-to-DC conversion Supply line switching. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors).
Request a Quote
Datasheet
Datasheet Summary
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NPN low VCEsat transistor in a small SOT23 plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pin pitch. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 2 A. The collector-emitter saturation voltage is 200 mV at 1 A collector current and 100 mA base current, with a saturation resistance of 200 mΩ. The device is rated for a junction temperature up to 150 °C and dissipates up to 1.25 W under pulsed conditions. The SOT23 package is surface-mounted and compatible with reflow and wave soldering profiles.

Datasheet Summary
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NPN low VCEsat transistor in a small SOT23 plastic package, measuring 2.9 mm x 1.3 mm x 1 mm, with a 1.9 mm pin pitch. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 2 A. The collector-emitter saturation voltage is 200 mV at 1 A collector current and 100 mA base current, with a saturation resistance of 200 mΩ. The device is rated for a junction temperature up to 150 °C and dissipates up to 1.25 W under pulsed conditions. The SOT23 package is surface-mounted and compatible with reflow and wave soldering profiles.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A NPN low VCEsat (BISS) transistor - PBSS4160TVL - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A NPN low VCEsat (BISS) transistor
PBSS4160TVL
60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160TVL
NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial. Power management: DC-to-DC conversion Supply line switching. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors).

NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency, reduces heat generation
  • Reduces printed-circuit board area required

Applications

  • Major application segments:
    • Automotive 42 V power
    • Telecom infrastructure
    • Industrial.
  • Power management:
    • DC-to-DC conversion
    • Supply line switching.
  • Peripheral driver
    • Driver in low supply voltage applications (e.g. lamps and LEDs)
    • Inductive load driver (e.g. relays, buzzers and motors).
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1377221-PBSS4160TVL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1377221-PBSS4160TVL
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1377221-PBSS4160TVL
Win Source Part Number: 1377221-PBSS4160TVL Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Product Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Base Product Number: PBSS4160 Mounting Type: Surface Mount HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA Frequency - Transition: 220MHz Power - Max: 400 mW

Win Source Part Number: 1377221-PBSS4160TVL
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Package: Tape & Reel
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Base Product Number: PBSS4160
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 220MHz
Power - Max: 400 mW

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4160TVLDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4160TVLDKR-ND
Single Bipolar Transistors 1727-PBSS4160TVLDKR-ND
TRANS NPN 60V 1A TO-236AB

TRANS NPN 60V 1A TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4160TVLTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4160TVLTR-ND
Single Bipolar Transistors 1727-PBSS4160TVLTR-ND
Bipolar (BJT) Transistor NPN 60V 1A 220MHz 400mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 60V 1A 220MHz 400mW Surface Mount TO-236AB

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4160TVLCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4160TVLCT-ND
Single Bipolar Transistors 1727-PBSS4160TVLCT-ND
TRANS NPN 60V 1A TO-236AB

TRANS NPN 60V 1A TO-236AB

Buy Now Datasheet
Bipolar Trans, Npn, 60V, 0.9A, To-236Ab Rohs Compliant Nexperia - 74AH1021 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Trans, Npn, 60V, 0.9A, To-236Ab Rohs Compliant Nexperia
74AH1021
Bipolar Trans, Npn, 60V, 0.9A, To-236Ab Rohs Compliant Nexperia 74AH1021
BIPOLAR TRANS, NPN, 60V, 0.9A, TO-236AB ROHS COMPLIANT: YES

BIPOLAR TRANS, NPN, 60V, 0.9A, TO-236AB ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBSS4160TVL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBSS4160TVL
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBSS4160TVL
TRANS NPN 60V 1A TO236AB

TRANS NPN 60V 1A TO236AB

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4160TVL
Bipolar Transistors - BJT PBSS4160TVL
Bipolar Transistors - BJT BL Bipolar Discretes

Bipolar Transistors - BJT BL Bipolar Discretes

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4160TVL 1377221-PBSS4160TVL 1727-PBSS4160TVLDKR-ND 74AH1021 PBSS4160TVL PBSS4160TVL
Product Name 60 V, 1 A NPN low VCEsat (BISS) transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors Bipolar Trans, Npn, 60V, 0.9A, To-236Ab Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Package Type SOT23; SOT23 SOT23 SOT3 SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 TO-236AB
Transistor Grade / Operating Range Industrial; Automotive
Polarity NPN NPN NPN
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