Nexperia B.V. N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 BUK9Y113-100E,115

Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 - BUK9Y113-100E,115 - Nexperia B.V.
Nijmegen, Netherlands
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
BUK9Y113-100E,115
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 BUK9Y113-100E,115
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

Applications

  • 12 V, 24 V and 48 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Singapore, Singapore
N-Channel 100 V SOIC MOSFET Transistor
278-BUK9Y113-100E,115
N-Channel 100 V SOIC MOSFET Transistor 278-BUK9Y113-100E,115
BUK9Y113-100E - N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y113-100E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y113-100E,11 5 can be used for catalog matching and distributor lookup.

BUK9Y113-100E - N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y113-100E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y113-100E,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1854-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1854-6-ND
Single FETs, MOSFETs 1727-1854-6-ND
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-1854-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1854-2-ND
Single FETs, MOSFETs 1727-1854-2-ND
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

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Single FETs, MOSFETs - 1727-1854-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1854-1-ND
Single FETs, MOSFETs 1727-1854-1-ND
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1018686-BUK9Y113-100E,115 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1018686-BUK9Y113-100E,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1018686-BUK9Y113-100E,115
Win Source Part Number: 1018686-BUK9Y113-100 E,115 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchMOS™ Package: Tape & Reel Standard Package: 1,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 45W (Tc) Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Vgs (Max): ±10V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Other Names: 934067041115,BUK9Y11 3-100E,115-ND,1727-1 854-2,568-11545-1,56 8-11545-2,1727-1854- 1,568-11545-2-ND,568 -11545-1-ND,568-1154 5-6-ND,1727-1854-6,5 68-11545-6 Base Product Number: BUK9Y113 Drive Voltage (Max Rds On, Min Rds On): 5V

Win Source Part Number: 1018686-BUK9Y113-100E,115
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934067041115,BUK9Y113-100E,115-ND,1727-1854-2,568-11545-1,568-11545-2,1727-1854-1,568-11545-2-ND,568-11545-1-ND,568-11545-6-ND,1727-1854-6,568-11545-6
Base Product Number: BUK9Y113
Drive Voltage (Max Rds On, Min Rds On): 5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9Y113-100E,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9Y113-100E,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9Y113-100E,115
MOSFET N-CH 100V 12A LFPAK56

MOSFET N-CH 100V 12A LFPAK56

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK9Y113-100E,115 278-BUK9Y113-100E,115 1727-1854-6-ND 1018686-BUK9Y113-100E,115 BUK9Y113-100E,115
Product Name N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 N-Channel 100 V SOIC MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
IDSS 12000 milliamps
VGS(off) 10 volts
PD 45 milliwatts 45000 milliwatts
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