N-channel 100 V MOSFET designed for automotive power switching, in an LFPAK56 (SOT669) surface-mount package. It has a drain-source on-state resistance of 97 to 113 mΩ at 25 °C with V_GS = 5 V, a continuous drain current of 12 A at 25 °C, and a total power dissipation of 45 W. The device is rated for a junction temperature up to 175 °C, supports repetitive avalanche energy up to 13.4 mJ, and features a logic-level gate with V_GS(th) greater than 0.5 V at 175 °C. It is qualified to AEC-Q101 standard.
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
BUK9Y113-100E - N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin Product overview: BUK9Y113-100E,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9Y113-100E,11
Win Source Part Number: 1018686-BUK9Y113-100
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 45W (Tc)
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934067041115,BUK9Y11
Base Product Number: BUK9Y113
Drive Voltage (Max Rds On, Min Rds On): 5V
MOSFET N-CH 100V 12A LFPAK56
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9Y113-100E,115 | 1727-1854-6-ND | 278-BUK9Y113-100E,115 | 1018686-BUK9Y113-100E,115 | BUK9Y113-100E,115 |
| Product Name | N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | N-Channel 100 V SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 12000 milliamps | ||||
| VGS(off) | 10 volts | ||||
| PD | 45 milliwatts | 45000 milliwatts |
