Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112T E6327 BCR112T E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 200850-BCR112T E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Case / Package: PG-SC-75
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Alternative Parts (Cross-Reference): DTC143EETL; SRC1201E; BCR 112T E6327; BCR112TE6327XT;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

TRANS PREBIAS NPN 250MW SC75 Product overview: BCR112T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR112T E6327 can be used for catalog matching and distributor lookup.