Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 148 E6327

NPN silicon digital transistor with built-in bias resistors (47 kΩ each) for switching, inverter, and interface driver circuits, available in SOT23, SOT323, or SOT363 packages. Rated for a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation up to 250 mW depending on package. Junction temperature rated to 150 °C. Qualified to AEC-Q101 and RoHS compliant. Thermal resistance from junction to soldering point is ≤240 K/W for SOT23, ≤140 K/W for SOT363, and ≤105 K/W for SOT323. DC current gain (hFE) min. 70 at 5 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage ≤0.3 V at 10 mA collector current and 0.5 mA base current. Transition frequency is 100 MHz. Input resistor ratio R1/R2 is 0.9 to 1.1. Package dimensions and pin configurations vary by variant.