Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BCR35PN-E6433 BCR35PN-E6433

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1048899-BCR35PN-E6433
Packaging: Tape and Reel
Current Rating: 100 mA
Mounting: SMD (SMT)
Polarity: NPN, PNP
Number of Pins: 6
Categories: RF Transistors(BJT)
Case / Package: SOT-363-6
Alternative Parts (Cross-Reference): BCR35PN-E6433BCR 35PN E6433; BCR35PN E6433;
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -65 °C
Voltage Rating (DC): 50 V
Element Configuration: Dual
Max Power Dissipation: 250 mW
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 50 V
hFE Min: 70
Max Collector Current: 100 mA
Transition Frequency: 150 MHz

Trans Npn/pnp Prebias SOT363 Product overview: BCR35PN-E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BCR35PN-E6433 can be used for catalog matching and distributor lookup.