Infineon Technologies AG Bipolar Transistor Arrays, Pre-Biased BCR523UE6327

Description
BIPOLAR DIGITAL TRANSISTOR
Description
BIPOLAR DIGITAL TRANSISTOR
Datasheet
Datasheet Summary
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The BCR523U is a dual NPN silicon digital transistor in an SC74 package, designed for switching, inverter, and driver circuits with integrated bias resistors (R1 = 1 kΩ, R2 = 10 kΩ). It features two internally isolated transistors with matched characteristics. The package measures 6.1 mm × 4.6 mm and supports a maximum collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at T_S ≤ 115 °C. The junction temperature rating is 150 °C. It is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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The BCR523U is a dual NPN silicon digital transistor in an SC74 package, designed for switching, inverter, and driver circuits with integrated bias resistors (R1 = 1 kΩ, R2 = 10 kΩ). It features two internally isolated transistors with matched characteristics. The package measures 6.1 mm × 4.6 mm and supports a maximum collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at T_S ≤ 115 °C. The junction temperature rating is 150 °C. It is RoHS compliant and qualified to AEC-Q101.

Suppliers

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Bipolar Transistor Arrays, Pre-Biased - BCR523UE6327 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
BCR523UE6327
Bipolar Transistor Arrays, Pre-Biased BCR523UE6327
BIPOLAR DIGITAL TRANSISTOR

BIPOLAR DIGITAL TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BCR523UE6327
Product Name Bipolar Transistor Arrays, Pre-Biased
Polarity 2 NPN - Pre-Biased (Dual); NPN
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6
IC(max) 500 milliamps
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