Infineon Technologies AG 0.25W Bipolar Transistor BCR135 E6327

Description
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR135 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR135 E6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR135 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR135 E6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
0.25W Bipolar Transistor
293-BCR135 E6327
0.25W Bipolar Transistor 293-BCR135 E6327
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR135 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR135 E6327 can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR135 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR135 E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135 E6327 - 233830-BCR135 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135 E6327
233830-BCR135 E6327
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135 E6327 233830-BCR135 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 233830-BCR135 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 233830-BCR135 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-BCR135 E6327 233830-BCR135 E6327
Product Name 0.25W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135 E6327
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
Unlock Full Specs
to access all available technical data