Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN BCR22PN

Description
NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
  • Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN - BCR22PN - Infineon Technologies AG
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Description
NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
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Datasheet
Datasheet Summary
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BCR22PN is a dual NPN/PNP silicon digital transistor array in a SOT-363 package, designed for switching, inverter, interface, and driver circuits. Each transistor includes an integrated 22 kΩ bias resistor. The device has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at T_S = 115 °C. It operates with a junction temperature up to 150 °C and meets AEC-Q101 qualification. The package is Pb-free and RoHS compliant.

Datasheet Summary
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BCR22PN is a dual NPN/PNP silicon digital transistor array in a SOT-363 package, designed for switching, inverter, interface, and driver circuits. Each transistor includes an integrated 22 kΩ bias resistor. The device has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at T_S = 115 °C. It operates with a junction temperature up to 150 °C and meets AEC-Q101 qualification. The package is Pb-free and RoHS compliant.

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Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN - BCR22PN - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN
BCR22PN
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN BCR22PN
NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

NPN/PNP Silicon Digital Transistor Array


Summary of Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Two (galvanic) internal isolated NPN/PNP Transistors in one package
  • Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCR22PN
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR22PN
Polarity NPN/PNP (Dual); NPN; PNP
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
VCEO 50 volts
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