Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 166 E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
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PNP silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, interface, and driver circuits, housed in an SOT23 package, rated for a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at junction temperature up to 102°C, qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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PNP silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, interface, and driver circuits, housed in an SOT23 package, rated for a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at junction temperature up to 102°C, qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 166 E6327
Bipolar Transistors - Pre-Biased BCR 166 E6327
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 166 E6327
Product Name Bipolar Transistors - Pre-Biased
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