Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 135 E6433

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Datasheet
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NPN silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) for switching, inverter, and interface driver applications, in SOT23 package. Rated for 50 V collector-emitter and collector-base voltage, 100 mA collector current, and 200 mW total power dissipation at junction temperatures up to 102°C. Junction-to-soldering-point thermal resistance is ≤ 240 K/W. Qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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NPN silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) for switching, inverter, and interface driver applications, in SOT23 package. Rated for 50 V collector-emitter and collector-base voltage, 100 mA collector current, and 200 mW total power dissipation at junction temperatures up to 102°C. Junction-to-soldering-point thermal resistance is ≤ 240 K/W. Qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 135 E6433
Bipolar Transistors - Pre-Biased BCR 135 E6433
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 135 E6433
Product Name Bipolar Transistors - Pre-Biased
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