Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 135 E6433

NPN silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) for switching, inverter, and interface driver applications, in SOT23 package. Rated for 50 V collector-emitter and collector-base voltage, 100 mA collector current, and 200 mW total power dissipation at junction temperatures up to 102°C. Junction-to-soldering-point thermal resistance is ≤ 240 K/W. Qualified to AEC-Q101 and RoHS compliant.