Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 119 E6327

Description
Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR
Datasheet
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NPN silicon digital transistor with a built-in 4.7 kΩ input resistor, designed for switching, inverter, and interface circuits. It is available in SOT23, SOT323, and SOT363 packages, with a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW for SOT23, 250 mW for SOT323 and SOT363. The junction temperature rating is 150 °C, and thermal resistance ranges from 105 K/W to 240 K/W depending on the package. The device meets AEC-Q101 qualification and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

NPN silicon digital transistor with a built-in 4.7 kΩ input resistor, designed for switching, inverter, and interface circuits. It is available in SOT23, SOT323, and SOT363 packages, with a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW for SOT23, 250 mW for SOT323 and SOT363. The junction temperature rating is 150 °C, and thermal resistance ranges from 105 K/W to 240 K/W depending on the package. The device meets AEC-Q101 qualification and is RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 119 E6327
Bipolar Transistors - Pre-Biased BCR 119 E6327
Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 119 E6327
Product Name Bipolar Transistors - Pre-Biased
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