NPN silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) in a SOT23 package, rated for a collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at 79 °C. Junction temperature ranges from -65 °C to 150 °C. Compliant with AEC-Q101 and RoHS standards. Transition frequency is 100 MHz. Package marking is XCs with pin configuration: 1=B, 2=E, 3=C.
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCR 533 E6327 |
| Product Name | Bipolar Transistors - Pre-Biased |
