Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR583E6327

Description
BIPOLAR DIGITAL TRANSISTOR
Description
BIPOLAR DIGITAL TRANSISTOR
Datasheet
Datasheet Summary
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The BCR583 is a PNP silicon digital transistor with built-in bias resistors of 10 kΩ each, packaged in SOT23. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 500 mA, and a total power dissipation of 330 mW at T_S ≤ 79 °C. The junction temperature ranges from -65 °C to 150 °C. It is RoHS compliant and qualified to AEC Q101. Input on voltage ranges from 1.1 V to 2.5 V, input off voltage from 0.6 V to 1.5 V, and collector-emitter saturation voltage is up to 0.3 V at I_C = 50 mA and I_B = 2.5 mA. The transition frequency is 150 MHz.

Datasheet Summary
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The BCR583 is a PNP silicon digital transistor with built-in bias resistors of 10 kΩ each, packaged in SOT23. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 500 mA, and a total power dissipation of 330 mW at T_S ≤ 79 °C. The junction temperature ranges from -65 °C to 150 °C. It is RoHS compliant and qualified to AEC Q101. Input on voltage ranges from 1.1 V to 2.5 V, input off voltage from 0.6 V to 1.5 V, and collector-emitter saturation voltage is up to 0.3 V at I_C = 50 mA and I_B = 2.5 mA. The transition frequency is 150 MHz.

Suppliers

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Product
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Supplier Links
Single, Pre-Biased Bipolar Transistors - BCR583E6327 - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
BCR583E6327
Single, Pre-Biased Bipolar Transistors BCR583E6327
BIPOLAR DIGITAL TRANSISTOR

BIPOLAR DIGITAL TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BCR583E6327
Product Name Single, Pre-Biased Bipolar Transistors
Polarity PNP - Pre-Biased; PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 500 milliamps
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