The BCR35PN is a dual NPN/PNP silicon digital transistor array in an SOT-363 package, designed for switching, inverting, and interface circuits. Each transistor includes integrated bias resistors (R1 = 10 kΩ, R2 = 47 kΩ). The device has a maximum collector-emitter voltage of 50 V, a collector current rating of 100 mA, and a total power dissipation of 250 mW at T_S = 115 °C. The junction temperature ranges from -65 °C to 150 °C. It is RoHS compliant and qualified to AEC-Q101. The package dimensions and thermal resistance (R_thJS ≤ 140 K/W) are defined for surface-mount applications.
SMALL SIGNAL BIPOLAR TRANSISTOR
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCR35PNH6433 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased |
| Polarity | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP |
| Package Type | 6-VSSOP, SC-88, SOT-363 |
| IC(max) | 100 milliamps |
