Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 133S H6433

The BCR133S is a dual NPN silicon digital transistor in a SOT363 package, featuring integrated base resistors of 10 kΩ each for use in switching, inverter, and interface circuits. Each transistor has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at ambient temperatures up to 115°C. The device offers a DC current gain (hFE) minimum of 30 at 5 mA collector current and 5 V collector-emitter voltage, with a saturated collector-emitter voltage of 0.3 V maximum under specified conditions. It is RoHS compliant and qualified to AEC-Q101 standards. The SOT363 package measures 3.2 mm × 1.1 mm and contains six pins with a pin configuration of E1-B1-C2-E2-B2-C1. The part is available in tape-and-reel packaging with 3,000 or 10,000 units per reel.