Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR 133F E6327 BCR 133F E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 1022683-BCR 133F E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-TSFP-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Lighting, LED Lighting

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 130MHz 250mW Surface Mount PG-TSFP-3

TRANS PREBIAS NPN 50V TSFP-3 Product overview: BCR 133F E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR 133F E6327 can be used for catalog matching and distributor lookup.