Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 116 E6433

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Datasheet
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BCR116 E6433 is an NPN silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits. It is packaged in SOT23, is Pb-free and RoHS compliant, and meets AEC-Q101 qualification standards. Maximum collector-emitter voltage is 50 V, collector current is 100 mA, and total power dissipation is 200 mW at T_S ≤ 102°C. Junction temperature ranges from -65°C to 150°C. DC current gain (hFE) is a minimum of 70 at I_C = 5 mA and V_CE = 5 V. Collector-emitter saturation voltage is ≤ 0.3 V at I_C = 10 mA and I_B = 0.5 mA. Transition frequency is 150 MHz at I_C = 10 mA and V_CE = 5 V.

Datasheet Summary
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BCR116 E6433 is an NPN silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits. It is packaged in SOT23, is Pb-free and RoHS compliant, and meets AEC-Q101 qualification standards. Maximum collector-emitter voltage is 50 V, collector current is 100 mA, and total power dissipation is 200 mW at T_S ≤ 102°C. Junction temperature ranges from -65°C to 150°C. DC current gain (hFE) is a minimum of 70 at I_C = 5 mA and V_CE = 5 V. Collector-emitter saturation voltage is ≤ 0.3 V at I_C = 10 mA and I_B = 0.5 mA. Transition frequency is 150 MHz at I_C = 10 mA and V_CE = 5 V.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 116 E6433
Bipolar Transistors - Pre-Biased BCR 116 E6433
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 116 E6433
Product Name Bipolar Transistors - Pre-Biased
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