Infineon Technologies AG Bipolar Transistors - BJT BCW 61B E6327

Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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PNP silicon bipolar transistor for audio frequency input stages and driver applications, housed in an SOT23 package. It has a collector-emitter voltage rating of 32 V, a collector current rating of 100 mA, and a total power dissipation of 330 mW at 71 °C. The device features a DC current gain (hFE) range of 30 to 200 at 10 µA collector current and 5 V collector-emitter voltage, and 180 to 310 at 2 mA collector current and 5 V collector-emitter voltage. It is RoHS compliant and qualified to AEC-Q101 standards.

Datasheet Summary
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PNP silicon bipolar transistor for audio frequency input stages and driver applications, housed in an SOT23 package. It has a collector-emitter voltage rating of 32 V, a collector current rating of 100 mA, and a total power dissipation of 330 mW at 71 °C. The device features a DC current gain (hFE) range of 30 to 200 at 10 µA collector current and 5 V collector-emitter voltage, and 180 to 310 at 2 mA collector current and 5 V collector-emitter voltage. It is RoHS compliant and qualified to AEC-Q101 standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCW 61B E6327
Bipolar Transistors - BJT BCW 61B E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCW 61B E6327
Product Name Bipolar Transistors - BJT
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