Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 573 E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
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PNP silicon digital transistor with built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) in a SOT23 package, rated for 50 V collector-emitter voltage, 500 mA collector current, and 330 mW total power dissipation at 79°C, with a junction temperature of 150°C and thermal resistance of 215 K/W from junction to soldering point. RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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PNP silicon digital transistor with built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) in a SOT23 package, rated for 50 V collector-emitter voltage, 500 mA collector current, and 330 mW total power dissipation at 79°C, with a junction temperature of 150°C and thermal resistance of 215 K/W from junction to soldering point. RoHS compliant and qualified to AEC-Q101.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 573 E6327
Bipolar Transistors - Pre-Biased BCR 573 E6327
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 573 E6327
Product Name Bipolar Transistors - Pre-Biased
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