Infineon Technologies AG Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased BCR183E6433HTMA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1324232-BCR183E6433H TMA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 200 MHz Supplier Device Package: PG-SOT23 Case / Package: TO-236-3, SC-59, SOT-23-3 ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 2156-BCR183E6433HTMA 1-ITTR,BCR183E6433HT MA1TR,BCR183E6433XT, BCR183E6433HTMA1TR-N DTR-ND,BCR183E6433BT MA1,SP000010796,BCR 183 E6433-ND,BCR 183 E6433,INFINFBCR183E6 433HTMA1 Base Product Number: BCR183 Product Status: Not For New Designs RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1324232-BCR183E6433HTMA1 - Win Source Electronics
    Win Source Electronics
  • BCR183E6433HTMA1 - Rochester Electronics
    Rochester Electronics
  • Single, Pre-Biased Bipolar Transistors - BCR183E6433HTMA1TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR183E6433HTMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single, Pre-Biased Bipolar Transistors - BCR183E6433HTMA1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1324232-BCR183E6433H TMA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 200 MHz Supplier Device Package: PG-SOT23 Case / Package: TO-236-3, SC-59, SOT-23-3 ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 2156-BCR183E6433HTMA 1-ITTR,BCR183E6433HT MA1TR,BCR183E6433XT, BCR183E6433HTMA1TR-N DTR-ND,BCR183E6433BT MA1,SP000010796,BCR 183 E6433-ND,BCR 183 E6433,INFINFBCR183E6 433HTMA1 Base Product Number: BCR183 Product Status: Not For New Designs RoHS Status: ROHS3 Compliant
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Datasheet
Datasheet Summary
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The 1324232-BCR183E6433HTMA1 is a PNP silicon digital transistor designed for use in switching circuits, inverter applications, interface circuits, and driver circuits. It features built-in bias resistors (R1 and R2 both at 10 k,Ѷ) and is available in a multichip package that includes two internally isolated transistors with good matching characteristics. This transistor has a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 50 V, with a maximum collector current (IC) of 100 mA. The total power dissipation varies by type, with the BCR183 rated at 200 mW and the BCR183S/U/W rated at up to 250 mW. The device operates effectively with a junction temperature of up to 150 °C and has a storage temperature range of -65 °C to 150 °C. The transistor exhibits a DC current gain (hFE) of at least 30 at a collector current of 5 mA and a collector-emitter saturation voltage (VCEsat) of 300 mV at 10 mA. It also has a transition frequency (fT) of 200 MHz, making it suitable for high-frequency applications. The product is RoHS compliant and qualified according to AEC Q101 standards, indicating its suitability for automotive applications. The package type is PG-SOT23, and it is supplied in reels, with a standard packing of 10,000 units.

Datasheet Summary
Powered by GS/AI

The 1324232-BCR183E6433HTMA1 is a PNP silicon digital transistor designed for use in switching circuits, inverter applications, interface circuits, and driver circuits. It features built-in bias resistors (R1 and R2 both at 10 k,Ѷ) and is available in a multichip package that includes two internally isolated transistors with good matching characteristics. This transistor has a maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 50 V, with a maximum collector current (IC) of 100 mA. The total power dissipation varies by type, with the BCR183 rated at 200 mW and the BCR183S/U/W rated at up to 250 mW. The device operates effectively with a junction temperature of up to 150 °C and has a storage temperature range of -65 °C to 150 °C. The transistor exhibits a DC current gain (hFE) of at least 30 at a collector current of 5 mA and a collector-emitter saturation voltage (VCEsat) of 300 mV at 10 mA. It also has a transition frequency (fT) of 200 MHz, making it suitable for high-frequency applications. The product is RoHS compliant and qualified according to AEC Q101 standards, indicating its suitability for automotive applications. The package type is PG-SOT23, and it is supplied in reels, with a standard packing of 10,000 units.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1324232-BCR183E6433HTMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1324232-BCR183E6433HTMA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1324232-BCR183E6433HTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1324232-BCR183E6433H TMA1 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Packaging: Reel - TR Standard Package: 10,000 Mounting: Surface Mount Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 200 MHz Supplier Device Package: PG-SOT23 Case / Package: TO-236-3, SC-59, SOT-23-3 ECCN: EAR99 Fake Threat In the Open Market: 84 MSL Level: 1 (Unlimited) Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 2156-BCR183E6433HTMA 1-ITTR,BCR183E6433HT MA1TR,BCR183E6433XT, BCR183E6433HTMA1TR-N DTR-ND,BCR183E6433BT MA1,SP000010796,BCR 183 E6433-ND,BCR 183 E6433,INFINFBCR183E6 433HTMA1 Base Product Number: BCR183 Product Status: Not For New Designs RoHS Status: ROHS3 Compliant

Manufacturer: Infineon Technologies
Win Source Part Number: 1324232-BCR183E6433HTMA1
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Packaging: Reel - TR
Standard Package: 10,000
Mounting: Surface Mount
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200 MHz
Supplier Device Package: PG-SOT23
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: 2156-BCR183E6433HTMA1-ITTR,BCR183E6433HTMA1TR,BCR183E6433XT,BCR183E6433HTMA1TR-NDTR-ND,BCR183E6433BTMA1,SP000010796,BCR 183 E6433-ND,BCR 183 E6433,INFINFBCR183E6433HTMA1
Base Product Number: BCR183
Product Status: Not For New Designs
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
- BCR183E6433HTMA1 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BCR183E6433HTMA1
BCR183E6433HTMA1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - BCR183E6433HTMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR183E6433HTMA1TR-ND
Single, Pre-Biased Bipolar Transistors BCR183E6433HTMA1TR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount PG-SOT23

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount PG-SOT23

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
50V SOT23 Bipolar Transistor
292-BCR183E6433HTMA1
50V SOT23 Bipolar Transistor 292-BCR183E6433HTMA1
TRANS PREBIAS PNP 50V SOT23 Product overview: BCR183E6433HTMA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR183E6433HTMA1 can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 50V SOT23 Product overview: BCR183E6433HTMA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR183E6433HTMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR183E6433HTMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR183E6433HTMA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR183E6433HTMA1
TRANS PREBIAS PNP 50V SOT23

TRANS PREBIAS PNP 50V SOT23

Supplier's Site
Single, Pre-Biased Bipolar Transistors - BCR183E6433HTMA1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
BCR183E6433HTMA1
Single, Pre-Biased Bipolar Transistors BCR183E6433HTMA1
TRANS PREBIAS PNP 200MW SOT23-3

TRANS PREBIAS PNP 200MW SOT23-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1324232-BCR183E6433HTMA1 BCR183E6433HTMA1 BCR183E6433HTMA1TR-ND 292-BCR183E6433HTMA1 BCR183E6433HTMA1 BCR183E6433HTMA1
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Single, Pre-Biased Bipolar Transistors 50V SOT23 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Polarity PNP PNP PNP PNP - Pre-Biased; PNP
Package Type SOT3; SOT23; TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 100 milliamps 100000 milliamps 100 milliamps 100 milliamps
Power Gain 30 dB
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