Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR183W BCR183W

The BCR183W is a PNP silicon digital transistor with built-in bias resistors of approximately 10 kΩ each, designed for switching and driver applications. It is packaged in SOT323 and rated for a maximum collector-emitter voltage of 50 V and a collector current of 100 mA. The total power dissipation is 250 mW at ambient temperatures up to 124°C, with a junction temperature limit of 150°C. Thermal resistance from junction to soldering point is no more than 105 K/W. The device is RoHS compliant and qualified to AEC-Q101 standards.