Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T BCR192T

Description
Manufacturer: Infineon Technologies Win Source Part Number: 200902-BCR192T Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SC-75 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 200902-BCR192T Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SC-75 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T - 200902-BCR192T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T
200902-BCR192T
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T 200902-BCR192T
Manufacturer: Infineon Technologies Win Source Part Number: 200902-BCR192T Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SC-75 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 200902-BCR192T
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Case / Package: PG-SC-75
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
250MW Bipolar Transistor
293-BCR192T
250MW Bipolar Transistor 293-BCR192T
TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Bipolar RF Transistors
Product Number 200902-BCR192T 293-BCR192T
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T 250MW Bipolar Transistor
Polarity PNP; PNP - Pre-Biased PNP
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