Infineon Technologies AG Bipolar Transistors - BJT BCW 61A E6327

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Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 32 V, collector current of 100 mA, and power dissipation of 330 mW. Features low noise between 30 Hz and 15 kHz, low collector-emitter saturation voltage, and high current gain with hFE grouped as A/G ranging from 20 to 140 at 10 μA and 5 V, or 120 to 220 at 2 mA and 5 V. Qualified to AEC Q101 and RoHS compliant.

Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 32 V, collector current of 100 mA, and power dissipation of 330 mW. Features low noise between 30 Hz and 15 kHz, low collector-emitter saturation voltage, and high current gain with hFE grouped as A/G ranging from 20 to 140 at 10 μA and 5 V, or 120 to 220 at 2 mA and 5 V. Qualified to AEC Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCW 61A E6327
Bipolar Transistors - BJT BCW 61A E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCW 61A E6327
Product Name Bipolar Transistors - BJT
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