Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR523 BCR523

Description
NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101
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Description
NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101
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Datasheet
Datasheet Summary
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The BCR523 is an NPN silicon digital transistor with built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) for use in switching, inverter, and driver circuits. It is housed in an SOT23 package and rated for a maximum collector-emitter voltage of 50 V and a collector current of 500 mA. Total power dissipation is 330 mW at a case temperature of 79 °C. The junction temperature rating is 150 °C. It is RoHS compliant and qualified to AEC-Q101. The input on voltage ranges from 0.4 V to 1.4 V, and the collector-emitter saturation voltage is no more than 0.3 V at I_C = 50 mA and I_B = 2.5 mA. The transition frequency is 100 MHz at I_C = 50 mA and V_CE = 5 V.

Datasheet Summary
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The BCR523 is an NPN silicon digital transistor with built-in bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) for use in switching, inverter, and driver circuits. It is housed in an SOT23 package and rated for a maximum collector-emitter voltage of 50 V and a collector current of 500 mA. Total power dissipation is 330 mW at a case temperature of 79 °C. The junction temperature rating is 150 °C. It is RoHS compliant and qualified to AEC-Q101. The input on voltage ranges from 0.4 V to 1.4 V, and the collector-emitter saturation voltage is no more than 0.3 V at I_C = 50 mA and I_B = 2.5 mA. The transition frequency is 100 MHz at I_C = 50 mA and V_CE = 5 V.

Suppliers

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Supplier Links
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR523 - BCR523 - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR523
BCR523
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR523 BCR523
NPN Silicon Digital Transistors Summary of Features Switching circuit, inverter circuit, driver circuit Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ) BCR523U: Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101

NPN Silicon Digital Transistors


Summary of Features

  • Switching circuit, inverter circuit, driver circuit
  • Built in bias resistor (R1= 1 kΩ, R2= 10 kΩ)
  • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCR523
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR523
Polarity NPN (Single); NPN
Package Type SOT23; SOT23
Packing Method Tape Reel; TAPE & REEL
VCEO 50 volts
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