Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR135S BCR135S

Description
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching in one multichip package BCR135S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101
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Description
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching in one multichip package BCR135S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101
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Datasheet
Datasheet Summary
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BCR135S is a dual NPN silicon digital transistor in an SOT363 package, containing two internally isolated transistors with built-in bias resistors (R1=10 kΩ, R2=47 kΩ) for switching, inverter, and interface applications. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 115°C. The junction temperature rating is 150°C, with a thermal resistance from junction to soldering point of ≤140 K/W. It is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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BCR135S is a dual NPN silicon digital transistor in an SOT363 package, containing two internally isolated transistors with built-in bias resistors (R1=10 kΩ, R2=47 kΩ) for switching, inverter, and interface applications. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 115°C. The junction temperature rating is 150°C, with a thermal resistance from junction to soldering point of ≤140 K/W. It is RoHS compliant and qualified to AEC-Q101.

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Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR135S - BCR135S - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR135S
BCR135S
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR135S BCR135S
NPN Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching in one multichip package BCR135S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101

NPN Silicon Digital Transistor


Summary of Features

  • Switching circuit, inverter, interface circuit driver circuit
  • Built in bias resistor (R1=10 kΩ, R2=47 kΩ) BCR135S: Two internally isolated transistors with good matching in one multichip package
  • BCR135S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCR135S
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR135S
Polarity NPN (Dual); NPN
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
VCEO 50 volts
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