PNP silicon AF transistors for audio input stages and driver applications in SOT23 package. They have a collector-emitter voltage rating of 32 V, collector current of 100 mA, and total power dissipation of 330 mW. The BCW61D variant has a minimum DC current gain (hFE) of 100 at 2 mA collector current and 5 V collector-emitter voltage, with a maximum of 630. Transition frequency is 250 MHz. The device is RoHS compliant and qualified to AEC-Q101. Collector-emitter saturation voltage is 0.55 V maximum at 50 mA collector current and 1.25 mA base current. Noise figure is 2 dB maximum at 200 µA collector current and 1 kHz bandwidth. Storage and junction temperature range is -65 °C to 150 °C.
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCW 61D E6327 |
| Product Name | Bipolar Transistors - BJT |
