Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 108 E6433

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Datasheet
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NPN silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits, available in SOT23 packaging, rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW total power dissipation at T_S ≤ 102°C, with a junction temperature up to 150°C, qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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NPN silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits, available in SOT23 packaging, rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW total power dissipation at T_S ≤ 102°C, with a junction temperature up to 150°C, qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 108 E6433
Bipolar Transistors - Pre-Biased BCR 108 E6433
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 108 E6433
Product Name Bipolar Transistors - Pre-Biased
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