Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR135SH6327XT

The BCR135SH6327XT is a pre-biased NPN silicon digital transistor in an SOT363 package, containing two internally isolated transistors with matched characteristics. It features built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at junction temperature ≤ 115°C. The device complies with AEC-Q101 and RoHS standards. Junction-to-solder-point thermal resistance is ≤ 140 K/W.