Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 191 E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Datasheet
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BCR191 E6327 is a PNP silicon digital transistor with built-in bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) for switching, inverter, and driver circuits, packaged in SOT23. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW at ambient temperature up to 102°C. The junction temperature is rated to 150°C. The device is RoHS compliant and qualified to AEC-Q101. The SOT23 package confirms its physical footprint for surface-mount applications.

Datasheet Summary
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BCR191 E6327 is a PNP silicon digital transistor with built-in bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) for switching, inverter, and driver circuits, packaged in SOT23. It has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW at ambient temperature up to 102°C. The junction temperature is rated to 150°C. The device is RoHS compliant and qualified to AEC-Q101. The SOT23 package confirms its physical footprint for surface-mount applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 191 E6327
Bipolar Transistors - Pre-Biased BCR 191 E6327
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 191 E6327
Product Name Bipolar Transistors - Pre-Biased
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