Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR185S BCR185S

Description
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two internally isolated transistors with good matching in one multichip package BCR185S: For orientation in reel see package information below Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
Request a Quote
Description
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two internally isolated transistors with good matching in one multichip package BCR185S: For orientation in reel see package information below Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

BCR185S is a PNP silicon digital transistor in a SOT363 package, containing two internally isolated transistors with matched characteristics for use in switching, inverter, interface, and driver circuits. It features built-in bias resistors with a ratio of R1/R2 between 0.19 and 0.24, and a collector-emitter voltage rating of 50 V. The device supports a maximum collector current of 100 mA and a total power dissipation of 250 mW at a case temperature of 115°C, with a junction temperature limit of 150°C. Thermal resistance from junction to soldering point is ≤140 K/W. It is Pb-free, RoHS compliant, and qualified to AEC-Q101.

Datasheet Summary
Powered by GS/AI

BCR185S is a PNP silicon digital transistor in a SOT363 package, containing two internally isolated transistors with matched characteristics for use in switching, inverter, interface, and driver circuits. It features built-in bias resistors with a ratio of R1/R2 between 0.19 and 0.24, and a collector-emitter voltage rating of 50 V. The device supports a maximum collector current of 100 mA and a total power dissipation of 250 mW at a case temperature of 115°C, with a junction temperature limit of 150°C. Thermal resistance from junction to soldering point is ≤140 K/W. It is Pb-free, RoHS compliant, and qualified to AEC-Q101.

Suppliers

Company
Product
Description
Supplier Links
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR185S - BCR185S - Infineon Technologies AG
Neubiberg, Germany
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR185S
BCR185S
Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR185S BCR185S
PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ ) BCR185S: Two internally isolated transistors with good matching in one multichip package BCR185S: For orientation in reel see package information below Pb-free (RoHS compliant) package 1) Qualified according AEC Q101

PNP Silicon Digital Transistor


Summary of Features

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1 = 10 kΩ , R2 = 47 kΩ )
  • BCR185S: Two internally isolated transistors with good matching in one multichip package
  • BCR185S: For orientation in reel see package information below
  • Pb-free (RoHS compliant) package 1)
  • Qualified according AEC Q101
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BCR185S
Product Name Small Signal Transistors & Diodes - Bipolar Transistor - Digital Transistor - BCR185S
Polarity PNP (Dual); PNP
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
VCEO 50 volts
Unlock Full Specs
to access all available technical data