Infineon Technologies AG Bipolar Transistors - BJT BCV 62B E6433

Description
Bipolar Transistors - BJT PNP Silicon Double TRANSISTOR
Description
Bipolar Transistors - BJT PNP Silicon Double TRANSISTOR
Datasheet
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BCV62B is a PNP silicon double transistor in a SOT143 package, designed for current mirror applications with good thermal coupling and V_BE matching. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 100 mA, and a total power dissipation of 300 mW at T_S = 99 °C. The device features a DC current gain (h_FE) range of 220 to 475 at I_C = 2 mA and V_CE = 5 V, with a collector-emitter saturation voltage of up to 650 mV at I_C = 100 mA and I_B = 5 mA. It is RoHS compliant and qualified to AEC-Q101 standards.

Datasheet Summary
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BCV62B is a PNP silicon double transistor in a SOT143 package, designed for current mirror applications with good thermal coupling and V_BE matching. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 100 mA, and a total power dissipation of 300 mW at T_S = 99 °C. The device features a DC current gain (h_FE) range of 220 to 475 at I_C = 2 mA and V_CE = 5 V, with a collector-emitter saturation voltage of up to 650 mV at I_C = 100 mA and I_B = 5 mA. It is RoHS compliant and qualified to AEC-Q101 standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCV 62B E6433
Bipolar Transistors - BJT BCV 62B E6433
Bipolar Transistors - BJT PNP Silicon Double TRANSISTOR

Bipolar Transistors - BJT PNP Silicon Double TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCV 62B E6433
Product Name Bipolar Transistors - BJT
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