BCV61C is an NPN silicon double transistor in a SOT143 package, designed for current mirror applications with matched thermal coupling and current gain. It features a maximum collector-emitter voltage of 30 V, a DC collector current rating of 100 mA, and a total power dissipation of 300 mW at 99 °C. The device has a minimum DC current gain of 420 at 2 mA collector current and 5 V collector-emitter voltage, with a collector-emitter saturation voltage of up to 600 mV at 100 mA collector and 5 mA base current. It is RoHS compliant and qualified to AEC-Q101 standards.
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCV 61C E6327 |
| Product Name | Bipolar Transistors - BJT |
