Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR119E6327HTSA1 BCR119E6327HTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 769794-BCR119E6327HT SA1 Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Family Name: BCR119 Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 500μA, 10mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 120 @ 5mA, 5V Alternative Parts (Cross-Reference): LMUN2216LT3G; LMUN2216LT1G; MUN2216; MMUN2216LT3G; Introduction Date: July 01, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 769794-BCR119E6327HT SA1 Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Family Name: BCR119 Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 500μA, 10mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 120 @ 5mA, 5V Alternative Parts (Cross-Reference): LMUN2216LT3G; LMUN2216LT1G; MUN2216; MMUN2216LT3G; Introduction Date: July 01, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR119E6327HTSA1 - 769794-BCR119E6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR119E6327HTSA1
769794-BCR119E6327HTSA1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR119E6327HTSA1 769794-BCR119E6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 769794-BCR119E6327HT SA1 Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Family Name: BCR119 Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 500μA, 10mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 120 @ 5mA, 5V Alternative Parts (Cross-Reference): LMUN2216LT3G; LMUN2216LT1G; MUN2216; MMUN2216LT3G; Introduction Date: July 01, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 769794-BCR119E6327HTSA1
Packaging: Reel package
Package: TO-236-3, SC-59, SOT-23-3
Mounting: SMD
Power - Max: 200mW
Transistor Type: NPN - Pre-Biased
Frequency - Transition: 150MHz
Family Name: BCR119
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Manufacturer Package: PG-SOT23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 500μA, 10mA
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 120 @ 5mA, 5V
Alternative Parts (Cross-Reference): LMUN2216LT3G; LMUN2216LT1G; MUN2216; MMUN2216LT3G;
Introduction Date: July 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
50V SOT23 Bipolar Transistor
292-BCR119E6327HTSA1
50V SOT23 Bipolar Transistor 292-BCR119E6327HTSA1
TRANS PREBIAS NPN 50V SOT23 Product overview: BCR119E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR119E6327HTSA1 can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V SOT23 Product overview: BCR119E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR119E6327HTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BCR119E6327HTSA1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - BCR119E6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR119E6327HTSA1TR-ND
Single, Pre-Biased Bipolar Transistors BCR119E6327HTSA1TR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount PG-SOT23

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount PG-SOT23

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR119E6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR119E6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR119E6327HTSA1
TRANS PREBIAS NPN 50V SOT23

TRANS PREBIAS NPN 50V SOT23

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 769794-BCR119E6327HTSA1 292-BCR119E6327HTSA1 BCR119E6327HTSA1 BCR119E6327HTSA1TR-ND BCR119E6327HTSA1
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR119E6327HTSA1 50V SOT23 Bipolar Transistor Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type SOT3; SOT23 Tape & Reel (TR) PG-SOT23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel package Tape & Reel (TR) Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
IC(max) 1.00E-4 milliamps 100000 milliamps 100 milliamps
Power Gain 120 dB
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