Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433 BCR555 E6433

Manufacturer: Infineon Technologies
Win Source Part Number: 200916-BCR555 E6433
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

TRANS PREBIAS PNP 300MW SOT23-3 Product overview: BCR555 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300MW, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 300MW, SOT23, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR555 E6433 can be used for catalog matching and distributor lookup.