Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433 BCR555 E6433

Description
Manufacturer: Infineon Technologies Win Source Part Number: 200916-BCR555 E6433 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Case / Package: PG-SOT23-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 50mA, 5V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 200916-BCR555 E6433 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Case / Package: PG-SOT23-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 50mA, 5V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433 - 200916-BCR555 E6433 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433
200916-BCR555 E6433
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433 200916-BCR555 E6433
Manufacturer: Infineon Technologies Win Source Part Number: 200916-BCR555 E6433 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Case / Package: PG-SOT23-3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 50mA, 5V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 200916-BCR555 E6433
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 200916-BCR555 E6433
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555 E6433
Polarity PNP; PNP - Pre-Biased
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