Infineon Technologies AG 250MW Bipolar Transistor BCR192T E6327

Description
TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T E6327 can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T E6327 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
250MW Bipolar Transistor
293-BCR192T E6327
250MW Bipolar Transistor 293-BCR192T E6327
TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T E6327 can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 250MW SC75 Product overview: BCR192T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250MW. Search-friendly keywords include transistor, BJT, switching, amplification, 250MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR192T E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T E6327 - 200903-BCR192T E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T E6327
200903-BCR192T E6327
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T E6327 200903-BCR192T E6327
Manufacturer: Infineon Technologies Win Source Part Number: 200903-BCR192T E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SC-75 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 200903-BCR192T E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Case / Package: PG-SC-75
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-BCR192T E6327 200903-BCR192T E6327
Product Name 250MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR192T E6327
Polarity PNP PNP; PNP - Pre-Biased
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