Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 116 E6327

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
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NPN silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits, available in SOT23 package, rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW power dissipation at T_S ≤ 102°C, with a junction temperature limit of 150°C and thermal resistance R_thJS ≤ 240 K/W. The device is RoHS compliant and qualified to AEC-Q101.

Datasheet Summary
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NPN silicon digital transistor with built-in bias resistors (R1 = 4.7 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits, available in SOT23 package, rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW power dissipation at T_S ≤ 102°C, with a junction temperature limit of 150°C and thermal resistance R_thJS ≤ 240 K/W. The device is RoHS compliant and qualified to AEC-Q101.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 116 E6327
Bipolar Transistors - Pre-Biased BCR 116 E6327
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 116 E6327
Product Name Bipolar Transistors - Pre-Biased
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