Infineon Technologies AG BCR185WE6327

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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Datasheet
Datasheet Summary
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BCR185W is a PNP silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) for use in switching, inverter, and driver circuits. It is packaged in SOT323 and features a collector-emitter voltage rating of 50 V, a collector current of 100 mA, and a total power dissipation of 250 mW at T_S ≤ 124°C. The junction temperature is rated to 150°C. The device meets AEC-Q101 qualification and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

BCR185W is a PNP silicon digital transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) for use in switching, inverter, and driver circuits. It is packaged in SOT323 and features a collector-emitter voltage rating of 50 V, a collector current of 100 mA, and a total power dissipation of 250 mW at T_S ≤ 124°C. The junction temperature is rated to 150°C. The device meets AEC-Q101 qualification and is RoHS compliant.

Suppliers

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Product
Description
Supplier Links
 - BCR185WE6327 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BCR185WE6327
Polarity PNP
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