BCV61B is an NPN silicon double transistor in a SOT143 package, designed for current mirror applications with matched current gain and thermal coupling. It has a collector-emitter voltage rating of 30 V, a DC collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The device features a minimum DC current gain of 200 at 2 mA collector current and 5 V collector-emitter voltage, with a collector-emitter saturation voltage of up to 250 mV at 10 mA collector and 0.5 mA base current. It is RoHS compliant and qualified to AEC-Q101. The package dimensions are 9.0 mm length, 2.9 mm width, and 1.9 mm height, with a pin configuration of C2, C1, E1, E2.
Bipolar Transistors - BJT NPN Silicon Double Transistor 30V 100mA
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCV 61B E6433 |
| Product Name | Bipolar Transistors - BJT |
