Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR148WE6327BTSA1

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323
Request a Quote Datasheet

Suppliers

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Supplier Links
Single, Pre-Biased Bipolar Transistors - BCR148WE6327BTSA1TR-NDTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR148WE6327BTSA1TR-NDTR-ND
Single, Pre-Biased Bipolar Transistors BCR148WE6327BTSA1TR-NDTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 100MHz 250mW Surface Mount PG-SOT323

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR148WE6327BTSA1 - 1022695-BCR148WE6327BTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR148WE6327BTSA1
1022695-BCR148WE6327BTSA1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR148WE6327BTSA1 1022695-BCR148WE6327BTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022695-BCR148WE6327 BTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT323-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022695-BCR148WE6327BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-SOT323-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR148WE6327BTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR148WE6327BTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR148WE6327BTSA1
TRANS PREBIAS NPN 50V SOT323

TRANS PREBIAS NPN 50V SOT323

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BCR148WE6327BTSA1TR-NDTR-ND 1022695-BCR148WE6327BTSA1 BCR148WE6327BTSA1
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR148WE6327BTSA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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