Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135S E6327 BCR135S E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 200869-BCR135S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 200869-BCR135S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135S E6327 - 200869-BCR135S E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135S E6327
200869-BCR135S E6327
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135S E6327 200869-BCR135S E6327
Manufacturer: Infineon Technologies Win Source Part Number: 200869-BCR135S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 200869-BCR135S E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 200869-BCR135S E6327
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR135S E6327
Polarity NPN; 2 NPN - Pre-Biased (Dual)
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