Infineon Technologies AG 50V SOT23 Bipolar Transistor BCR108E6433HTMA1

TRANS PREBIAS NPN 50V SOT23 Product overview: BCR108E6433HTMA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR108E6433HTMA1 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 170MHz 200mW Surface Mount PG-SOT23

Win Source Part Number: 1010339-BCR108E6433HTMA1
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel (TR)
Standard Package: 10,000
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170 MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Infineon Technologies
Other Names: BCR108E6433HTMA1TR,BCR108E6433XT,BCR 108 E6433,SP000010737,BCR 108 E6433-ND
Base Product Number: BCR108
Product Status: Not For New Designs