Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 108S H6327

Description
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Description
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Datasheet
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BCR108S is a dual NPN silicon digital transistor in a SOT363 package, integrating two internally isolated transistors with matched bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for switching, inverter, and driver applications. It supports a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at T_S ≤ 115°C. Junction temperature is rated to 150°C with thermal resistance R_thJS ≤ 140 K/W. The device meets AEC-Q101 qualification and is RoHS compliant.

Datasheet Summary
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BCR108S is a dual NPN silicon digital transistor in a SOT363 package, integrating two internally isolated transistors with matched bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for switching, inverter, and driver applications. It supports a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at T_S ≤ 115°C. Junction temperature is rated to 150°C with thermal resistance R_thJS ≤ 140 K/W. The device meets AEC-Q101 qualification and is RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 108S H6327
Bipolar Transistors - Pre-Biased BCR 108S H6327
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR

Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 108S H6327
Product Name Bipolar Transistors - Pre-Biased
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